2SK2684 fet equivalent, silicon n channel dv-l mos fet.
* Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A)
* 4V gate drive devices.
* High speed switching
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LDPAK
4 4
D
1 1
2
3
G
2
3
1..
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